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HAT3015R
Silicon N/P Channel Power MOS FET High Speed Power Switching
REJ03G1368-0400 Rev.4.00 Apr 04, 2006
Features
* Low on-resistance * Capable of 4 V gate drive * High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8)
78 DD 5 76 4 S1 MOS1 Nch S3 MOS2 Pch 56 DD
8
2 G 3 12
4 G
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID ID(pulse) IDR Pch Note2 Pch Note3 Tch Tstg
Note1
Ratings Nch 200 15 0.5 2 0.5 1.3 2 150 -55 to +150 Pch -200 15 -0.25 -1 -0.25 1.3 2 150 -55 to +150
Unit V V A A A W W
Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
C
C
Rev.4.00 Apr 04, 2006 page 1 of 3
HAT3015R
Electrical Characteristics
* N Channel (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF Min 200 15 -- -- 1.0 -- -- -- 0.56 -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 1.6 1.9 2.4 0.86 120 29 10 10 14 24 9 0.9 Max -- -- 10 5 2.1 2.2 2.7 5.5 -- -- -- -- -- -- -- -- 1.4 Unit V V A A V S pF pF pF ns ns ns ns V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 12 V, VDS = 0 VDS = 200 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 0.5 A, VGS = 10 V Note4 ID = 0.5 A, VGS = 4 V Note4 ID = 2 A, VGS = 5 V Note4 ID = 0.5 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz
VGS = 5 V, ID = 0.5 A, VDD 30 V
IF = 0.5 A, VGS = 0 Note4
* P Channel (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Notes: 5. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF Min -200 15 -- -- -1.0 -- -- -- 0.29 -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 5.0 6.0 7.0 0.45 140 37 10 12 9 25 15 -0.9 Max -- -- 10 -5 -2.0 6.2 7.5 10.0 -- -- -- -- -- -- -- -- -1.4 Unit V V A A V S pF pF pF ns ns ns ns V Test Conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 12 V, VDS = 0 VDS = -200 V, VGS = 0 VDS = -10 V, ID = -1 mA ID = -0.25 A, VGS = -10 V Note5 ID = -0.25 A, VGS = -4 V Note5 ID = -1 A, VGS = -5 V Note5 ID = -0.25 A, VDS = -10 V Note5 VDS = -10 V, VGS = 0, f = 1 MHz
VGS = -5 V, ID = -0.25 A, VDD -30 V
IF = -0.25 A, VGS = 0 Note5
Rev.4.00 Apr 04, 2006 page 2 of 3
HAT3015R
Package Dimensions
Package Name SOP-8 JEITA Package Code P-SOP8-3.95 x 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g
*1 D
F
8
5
*2 E HE
bp
Index mark
1
Z e
4
* 3 bp xM
c
Terminal cross section (Ni/Pd/Au plating)
NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
Reference Dimension in Millimeters Symbol
Min
L1
L
D E A2 A1 A bp b1 c c1 HE e x y Z L L1
Nom Max 4.90 5.3 3.95
A
0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25
A1
y
Detail F
0 8 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08
Ordering Information
Part Name HAT3015R-EL-E Quantity 2500 pcs Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.4.00 Apr 04, 2006 page 3 of 3
Sales Strategic Planning Div.
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(c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0

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